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| NTE2341(NPN) & NTE2342 (PNP) Silicon Complementary Transistors Darlington Driver Description: The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a TO92 type package designed for general purpose, low frequency applications and as relay drivers. Absolute Maximum Ratings: Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V DC Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Power Dissipation, Ptot TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW TA = +25C, Note 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Maximum Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 156K/W Note 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125K/W Note 1. Mounted on a PC Board, max lead length 4mm, mounting pad for collector lead min 10mm x 10mm. Electrical Characteristics: (TJ = +25C unless otherwise specified) Parameter Collector-EmitterBreakdown Voltage Collector-BaseBreakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol Test Conditions Min 80 100 5 - - - 1000 2000 Typ - - - - - - - - Max - - - 500 100 100 - - Unit V V V nA nA nA V(BR)CEO IC = 50mA, IB = 0 V(BR)CBO IC = 100A, IB = 0 V(BR)EBO IE = 100A, IC = 0 ICEO ICBO IEBO hFE VCE = 40V, IB = 0 VCB = 100V, IE = 0 VCE = 4V, IC = 0 IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Symbol Test Conditions IC = 1A, IB = 1mA VBE(sat) fT IC = 1A, IB = 1mA, Note 3 IC = 500mA, VCE = 5V, f = 100MHz Min - - - - Typ - - - 200 Max 1.3 1.8 2.2 - Unit V V V MHz VCE(sat) IC = 500mA, IB = 0.5mA NTE2341 (NPN) B C .135 (3.45) Min .210 (5.33) Max E Seating Plane NTE2342 (PNP) B C .500 (12.7) Min .021 (.445) Dia Max ECB E .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max |
Price & Availability of NTE2342
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